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Stress behavior of TIN films formed by reactive ion-beam-assisted deposition

DOI: 10.1016/0167-577X(93)90160-Y
Title: Stress behavior of TIN films formed by reactive ion-beam-assisted deposition
Journal Title: Materials Letters
Volume: 16
Issue: 4
Publication Date: April 1993
Start Page: 185
End Page: 188
Published online: 6 May 2003
ISSN: 0167-577X
Author: Wang Xi
Affiliations: Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Abstract: ct of ion species and ion energy on the intrinsic stress in TiN films formed by reactive ion-beam-assisted deposition has been examined. The result shows that the stress changes from tensile to compressive and increases in magnitude with increasing ionic mass and ion energy. This stress annealing is considered to be momentum controlled.
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